Place of Origin : Shanghai,China
Post Date : 03-11-2011
Expiry Date : 10-11-2011

The IRFZ48 Is Designed As One Kind Of Power MOSFET Device That Has Some Points Of Features:(1)Dynamic DV/dt Rating; (2)Repetitive Avalanche Rated; (3)Ultra Low On-Resistance; (4)Very Low Thermal Resistance; (5)175 ℃ Operating Temperature; (6)Fast Switching; (7)Ease Of Paralleling; (8)Lead (Pb)-free Available. And The TO-220 Package Is Universally Preferred For All Commercial-industrial Applications At Power Dissipation Levels To Approximately 50 W.